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Features
* No External Components Except PIN Diode * Supply-voltage Range: 2.7V to 5.5V * Highest Sensitivity Due to Automatic Sensitivity Adaption (AGC) and Automatic Strong
Signal Adaption (ATC)
* Automatic Supply Voltage Adaptation * Highest Immunity against Disturbances from Daylight and Lamps * Available for Carrier Frequencies between 30 kHz to 76 kHz; adjusted by Zener-Diode
Fusing 2.5%
* TTL and CMOS Compatible
Applications
* Home Entertainment Applications (Audio/Video) * Home Appliances * Remote Control Equipment
Low-voltage IR Receiver ASSP T2526
1. Description
The IC T2526 is a complete IR receiver for data communication developed and optimized for use in carrier-frequency-modulated transmission applications. The IC offers highest sensitivity as well as highest suppression of noise from daylight and lamps. The T2526 is available with broadest range of frequencies (30, 33, 36, 37, 38, 40, 44, 56, 76 kHz) and 5 different noise suppression regulation types (standard, lamp, noise, short burst, data rate) covering requirements of high-end remote control solutions (please refer to selection guide available for T2525/T2526). The T2526 operates in a supply voltage range of 2.7V to 5.5V. The function of the T2526 can be described using the block diagram of Figure 1-1 on page 2. The input stage meets two main functions. First it provides a suitable bias voltage for the PIN diode. Secondly the pulsed photo-current signals are transformed into a voltage by a special circuit which is optimized for low noise applications. After amplification by a Controlled Gain Amplifier (CGA) the signals have to pass a tuned integrated narrow bandpass filter with a center frequency f0 which is equivalent to the chosen carrier frequency of the input signal The demodulator is used first to convert the input burst signal to a digital envelope output pulse and to evaluate the signal information quality, i.e., unwanted pulses will be suppressed at the output pin. All this is done by means of an integrated dynamic feedback circuit which varies the gain as a function of the present environmental conditions (ambient light, modulated lamps etc.). Other special features are used to adapt to the current application to secure best transmission quality.
4597H-AUTO-09/09
Figure 1-1.
Block Diagram
VS
IN Input
CGA and filter
OUT Demodulator
Microcontroller
Oscillator Carrier frequency f0
AGC/ATC and digital control
T2526
Modulated IR signal min 6 or 10 pulses GND
2. Pin Configuration
Figure 2-1. Pinning TSSOP8
VS NC OUT NC 1 2 3 4 8 7 6 5 NC NC GND IN
Table 2-1.
Pin 1 2 3 4 5 6 7 8
Pin Description
Symbol VS NC OUT NC IN GND NC NC Function Supply voltage Not connected Data output Not connected Input PIN-diode Ground Not connected Not connected
2
T2526
4597H-AUTO-09/09
T2526
3. Absolute Maximum Ratings
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameter Supply voltage Supply current Input voltage Input DC current at VS = 5V Output voltage Output current Operating temperature Storage temperature Power dissipation at Tamb = 25C Symbol VS IS VIN IIN VO IO Tamb Tstg Ptot Value -0.3 to +6 3 -0.3 to VS 0.75 -0.3 to VS 10 -25 to +85 -40 to +125 30 Unit V mA V mA V mA C C mW
4. Thermal Resistance
Parameters Junction ambient TSSOP8 Symbol RthJA Value 150 Unit K/W
3
4597H-AUTO-09/09
5. Electrical Characteristics, 3-V Operation
Tamb = 25C, VS = 3V unless otherwise specified. No. 1 1.1 1.2 2 2.1 2.2 2.3 2.4 3 3.1 3.2 Parameters Supply Supply-voltage range Supply current Output Internal pull-up resistor(1) Output voltage low Output voltage high Output current clamping Input Input DC current VIN = 0 See Figure 7-10 on page 10 5 5 IIN_DCMAX IIN_DCMAX IEemin -150 -350 A A C B R2 = 0 See Figure 7-10 on page 10 Tamb = 25C See Figure 7-10 on page 10 R2 = 2.4 k See Figure 7-10 on page 10 1, 3 3, 6 3, 1 3, 6 RPU VOL VOH IOCL VS - 0.25 8 30/40 250 Vs k mV V mA A B B B IIN =0 1 1 VS IS 2.7 0.7 3.0 0.9 3.3 1.3 V mA C B Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
Input DC current VIN = 0; Vs = 3V See Figure 7-3 on page 7 Tamb = 25C Minimum detection Test signal: threshold current See Figure 7-9 on page 10 See Figure 7-1 on page 7 VS = 3V Tamb= 25C, IIN_DC=1 A Minimum detection square pp threshold current with AC burst N = 16 current disturbance f = f0; tPER = 10 ms IIN_AC100 = Figure 7-8 on page 9 3 A at 100 Hz BER = 50(2) Test signal: See Figure 7-9 on page 10 VS = 3V, Tamb = 25C IIN_DC = 1 A square pp burst N = 16 f = f0; tPER = 10 ms Figure 7-8 on page 9 BER = 5%(2)
3.3
3
-700
pA
B
3.4
3
IEemin
-1300
pA
C
3.5
Maximum detection threshold current with VIN > 0V
3
IEemax
-200
A
D
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. Depending on version, see "Ordering Information" 2. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 3. After transformation of input current into voltage
4
T2526
4597H-AUTO-09/09
T2526
5. Electrical Characteristics, 3-V Operation (Continued)
Tamb = 25C, VS = 3V unless otherwise specified. No. 4 4.1 4.2 4.3 4.4 4.5 4.6 4.7 Parameters Maximum value of variable gain (CGA) Minimum value of variable gain (CGA) Total internal amplification(3) Center frequency fusing accuracy of bandpass Overall accuracy center frequency of bandpass Overall accuracy center frequency of bandpass BPF bandwidth Tamb = 0 to 70C -3 dB; f0 = 38 kHz; See Figure 7-7 on page 9 VS = 3V, Tamb = 25C Test Conditions Pin Symbol Min. Typ. Max. Unit Type* Controlled Amplifier and Filter GVARMAX GVARMIN GMAX f03V_FUSE f03V f03V B -2.5 -5.5 -4.5 51 -5 71 f0 f0 f0 3.8 +2.5 +3.5 +3.0 dB dB dB % % % kHz D D D A C C C
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. Depending on version, see "Ordering Information" 2. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 3. After transformation of input current into voltage
6. Electrical Characteristics, 5-V Operation
Tamb = 25C, VS = 5V unless otherwise specified. No. 5 5.1 5.2 6 6.1 6.2 6.3 6.4 Parameters Supply Supply-voltage range Supply current Output Internal pull-up resistor(1) Output voltage low Output voltage high Output current clamping R2 = 0 See Figure 7-10 on page 10 Tamb = 25C See Figure 7-10 on page 10 R2 = 2.4 k See Figure 7-10 on page 10 1, 3 3, 6 3, 1 3, 6 RPU VOL VOH IOCL VS - 0.25 8 30/40 250 Vs k mV V mA A B B B IIN =0 1 1 VS IS 4.5 0.9 5.0 1.2 5.5 1.6 V mA C B Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. Depending on version, see "Ordering Information" 2. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 3. After transformation of input current into voltage
5
4597H-AUTO-09/09
6. Electrical Characteristics, 5-V Operation (Continued)
Tamb = 25C, VS = 5V unless otherwise specified. No. 7 7.1 Parameters Input Input DC current VIN = 0 See Figure 7-10 on page 10 5 IIN_DCMAX IIN_DCMAX -400 A C Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
7.2
Input DC-current V = 0; Vs = 5V See Figure 7-4 on page IN Tamb = 25C 8 Test signal: See Figure 7-9 on page 10 VS = 5V Tamb = 25C IIN_DC = 1 A Min. detection square pp threshold current with burst N = 16 AC current disturbance f = f ; t 0 PER = 10 ms IIN_AC100 = 3 A at Figure 7-8 on page 9 100 Hz BER = 50(2) Test signal: See Figure 7-9 on page 10 VS = 5V, Tamb = 25 C IIN_DC = 1 A square pp burst N = 16 f = f0; tPER = 10 ms Figure 7-8 on page 9 BER = 5%(2) Min. detection threshold current See Figure 7-2 on page 7
5
-700
A
B
7.3
3
IEemin
-850
pA
B
7.4
3
IEemin
-2000
pA
C
7.5
Max. detection threshold current with VIN > 0V
3
IEemax
-500
A
D
8 8.1 8.2 8.3
Controlled Amplifier and Filter Maximum value of variable gain (CGA) Minimum value of variable gain (CGA) Total internal amplification(3) Resulting center frequency fusing accuracy f0 fused at VS = 3V VS = 5V, Tamb = 25C GVARMAX GVARMIN GMAX f05V 51 -5 71 f03V-FUSE + 0.5 dB dB dB D D D
8.4
%
A
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. Depending on version, see "Ordering Information" 2. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT 3. After transformation of input current into voltage
6.1
ESD
All pins 2000V HBM; 200V MM, MIL-STD-883C, Method 3015.7
6.2
Reliability
Electrical qualification (1000h) in molded plastic package
6
T2526
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T2526
7. Typical Electrical Curves at Tamb = 25C
Figure 7-1. IEemin versus IIN_DC, VS = 3V
100 VS = 3V f = f0 10
IEemin (nA)
1
0.1 0.1
1
10
100
1000
IIN_DC (A)
Figure 7-2.
IEemin versus IIN_DC, VS = 5V
100 VS = 5V f = f0 10
IEemin (nA)
1
0.1 0.1 1 10 100 1000
IIN_DC (A)
Figure 7-3.
VIN versus IIN_DC, VS = 3V
3.5 3.0 2.5 VS = 3V f = f0
VIN (V)
2.0 1.5 1.0 0.5 0 0 0.1 1 10 100 1000
IIN_DC (A)
7
4597H-AUTO-09/09
Figure 7-4.
VIN versus IIN_DC, VS = 5V
3.5 3.0 2.5 VS = 5V f = f0
VIN (V)
2.0 1.5 1.0 0.5 0 0 0.1 1 10 100 1000
IIN_DC (A)
Figure 7-5.
Data Transmission Rate, VS = 3V
5000 4500 4000 3500 VS = 3V
Short burst
Bits/s
3000 2500
Standard type
2000 1500
Lamp type
1000 500 0 25 35 45 55 65 75 85
f0 (kHz)
Figure 7-6.
Data Transmission Rate, VS = 5V
5000 4500 4000 3500 VS = 5V
Short burst
Standard type
Bits/s
3000 2500 2000 1500 1000 500 0 25 35 45 55 65 75 85
Lamp type
f0 (kHz)
8
T2526
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T2526
Figure 7-7. Typical Bandpass Curve
1.1 VS = 3V 1.0
Relative Amplitude
0.9 0.8 Bandwidth (-3 dB) 0.7 0.6 0.5 0.4 0.92
0.94
0.96
0.98
1.00
1.02
1.04
1.06
1.08
f/f0
Q = f/f0/B; B => -3 dB values. Example: Q = 1/(1.047 - 0.954) = 11 Figure 7-8. Illustration of Used Terms Example: f = 30 kHz, burst with 16 pulses, 16 periods
1066 s 533 s Burst (N = 16 pulses) Period (P = 16)
IN
1 7 16 7 7
33 s
OUT
t DON
tDOFF Envelope 1
533 s Envelope 16 17056 s/data word
OUT
Telegram pause Data word 17 ms TREF = 62 ms Data word
t
9
4597H-AUTO-09/09
Figure 7-9.
Test Circuit
I Ee = U1/400 k U1 1 nF 400 k VDD = 3V to 5V IIN_DC R1 = 220
VS IEe 20 k IIN_AC100 VPULSE 1 nF U2 IIN IN T2526 GND OUT
20 k f0 16
I IN_DC = U2/40 k
C1 4.7 F
+
DC
+
tPER = 10 ms
Figure 7-10. Application Circuit
VDD = 3V to 5V
(1)
optional
R1 = 220 IS VS IOCL IN IIN GND T2526 OUT RPU
R2(1) > 2.4 k
Microcontroller
+
IIN_DC IEe
C1 4.7 F
VIN
VO C2(1) = 470 pF
10
T2526
4597H-AUTO-09/09
T2526
8. Chip Dimensions
Figure 8-1. Chip Size in m
1210, 1040 GND 336,906 IN 783,887
scribe
VS
length
55,652
T2526
55,62 OUT
0,0
Fusing
width
Note: Pad coordinates are given for lower left corner of the pad in m from the origin 0,0
Dimensions
Length inclusive scribe Width inclusive scribe Thickness Pads Fusing pads
1.16 mm 1.37 mm 290 5% 90 x 90 70 x 70 AlCu/AlSiTi(1) 0.8 m Si3N4/SiO2 0.7/0.3 m
Pad metallurgy
Material Thickness
Finish
Material Thickness
Note:
1. Value depends on manufacture location.
11
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9. Ordering Information
Delivery: unsawn wafers (DDW) in box Extended Type Number T2526S0xx(1)C-DDW T2526S1xx(1)C-DDW T2526S2xx(1)C-DDW T2526S3xx C-DDW T2526S6xx(1)C-DDW T2526S7xx(1)C-DDW Notes:
(1)
PL(2) 2 1 2 1 2 1
RPU(3) 30 30 40 40 30 30
D(4) 2179 2179 1404 1404 3415 3415
Type(5) Standard type: 10 pulses, enhanced sensibility, high data rate Lamp type: 10 pulses, enhanced suppression of disturbances, secure data transmission Short burst type: 6 pulses, enhanced data rate
1. xx means the used carrier frequency value f0 30, 33, 36, 38, 40, 44 or 56 kHz (76 kHz type on request) 2. Two pad layout versions (see Figure 9-1 and Figure 9-2) available for different assembly demand 3. Integrated pull-up resistor at pin OUT (see electrical characteristics) 4. Typical data transmission rate up to bit/s with f0 = 56 kHz, VS = 5 V (see Figure 7-8 on page 9) 5. On request: noise type, data rate type
9.1
Pad Layout
Figure 9-1. Pad Layout 1
GND
IN
OUT
T2526
Fusing VS
Figure 9-2.
Pad Layout 2
(6) GND (1) VS (5) IN
T2526
(3) OUT
Fusing
12
T2526
4597H-AUTO-09/09
T2526
10. Revision History
Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this document. Revision No. 4597H-AUTO-09/09 History * Put datasheet in newest template * Ordering Information table changed * * * * Features on page 1 changed Applications on page 1 changed Section 1 "Description" on page 1 changed Section 5 "Electrical Characteristics, 3-V Operation" number 3.4 on page 3 changed * Section 6 "Electrical Characteristics, 5-V Operation" number 7.3 and 7.4 on page 5 changed * Section 9 "Ordering Information" on page 11 changed * Section 9 "Ordering Information" on page 11 changed * Put datasheet in a new template * Section 8 "Chip Dimensions" on page 10 changed * * * * Put datasheet in a new template First page: Pb-free logo added Page 11: Ordering Information changed Page 2, 3, 5, 11, 13: SO8 deleted
4597G-AUTO-10/06
4597F-AUTO-04/06 4597E-AUTO-04/06
4597D-AUTO-08/05
13
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4597H-AUTO-09/09

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